DESIGN,IMPLEMENTATION AND VERIFICATION OF C-BAND GAAS MESFET OSCILLATOR
نویسندگان
چکیده
منابع مشابه
Performance of GaAs MESFET Mixers at X Band
A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating some of the mixer parameters are described. Experiments performed on GaAs MESFET mixers at X band show that good noise performance and large dynamic range can be achieved with conversion gain. A conversion gain over 6 dB is measured at 7.8 ...
متن کاملTesting of a GaAs MESFET Static RAM
This paper describes the complete test, functional and parametric, of a 1Kb GaAs MESFET SRAM chip. The chip was developed as an evaluation vehicle for a new type of MESFET SRAM cell. The new cell, in contrast with conventional GaAs memory cells, minimizes the leakage current in access transistors of unselected cells. Two algorithms were selected for functional testing: MATS and Galloping Ones a...
متن کاملModeling and Design of GaAs MESFET Control Devices for Broad-Band Applications
Ahsrrucf -In this paper, closed-form expressions are developed for the small-signal parameters of broad-band GaAs control MESFET's. The theoretical conducting-state resistance and nonconducting-state capacitance are compared with experimental data and demonstrate the usefulness of the models. Additionally, we considered the power handling capability of these devices and describe the various lim...
متن کاملGaAs MESFET Photoresponse to CW Laser Probe
An effect, in planar GaAs MESFETs, whereby a sharp increaSe in optical gain at the transistor edges occurs, is reported. This gain effect only manifests when a large resistor is inserted in ser-ies with the gate, to produce the conditions for photovoltaic gate biasing. The mechanism for increased gãin, at t'he edges, is suggested to be due to carrier photogeneration in the substrate that is sub...
متن کاملA 100-MESFET Planar Grid Oscillator
-In this work we present a 100-MESFET oscillator which gives 21 W of CW effective radiated power (ERP) with a 16 dB directivity and a 20% dc to RF conversion effciency at 5 GHz. The oscillator is a planar grid structure periodically loaded with transistors. The grid radiates and the devices combine quasi-optically and lock to each other. The oscillator can also be quasi-optically iqjection-lock...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The International Conference on Electrical Engineering
سال: 1999
ISSN: 2636-4441
DOI: 10.21608/iceeng.1999.62518